to-92l plastic-encapsulate transistors 2sc1383 transistor (npn) 2SC1384 features z low collector to emitter saturation voltage v ce(sat). z complementary pair with 2sa0683 and 2sa0684. maximum ratings (t a =25 unless otherwise noted) electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage 2sc1383 2SC1384 v (br)cbo i c =10 a ,i e =0 30 60 v collector-emitter breakdown voltage 2sc1383 2SC1384 v (br)ceo i c =2ma , i b =0 25 50 v emitter-base breakdown voltage v (br)ebo i e = 10 a, i c =0 5 v collector cut-off current i cbo v cb =20v, i e =0 0.1 a h fe(1) v ce =10v, i c =500ma 85 340 dc current gain h fe(2) v ce =5v, i c =1a 50 collector-emitter saturation voltage v ce(sat) i c =500m a,i b =50ma 0.4 v base-emitter saturation voltage v be(sat) i c =500ma,i b =50ma 1.2 v transition frequency f t v ce =10v,i c =50ma 200 mhz classification of h fe (1) rank range 100-200 200-300 300-400 1 2 3 symbol parameter 2sc1383 2SC1384 units v cbo collector-base voltage 30 60 v v ceo collector-emitter voltage 25 50 v v ebo emitter-base voltage 5 v i c collector current ?continuous 1 a p c collector power dissipation 1 w t j junction temperature 150 t stg storage temperature -55-150 to-92l 1.emitter 2.collector 3.base product specification 1 of 1 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
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